Investigation of the pulsed electrochemical deposition of ZnO
Identifieur interne : 001928 ( Main/Repository ); précédent : 001927; suivant : 001929Investigation of the pulsed electrochemical deposition of ZnO
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Abstract
The influence of pulse parameters on the morphology of ZnO prepared by pulsed cathodic electrodeposition from oxygen-saturated aqueous ZnCl2 solution on ITO (indium tin oxide)/glass substrates was investigated. It was found that the ratio between the pulse and the pause duration has a crucial influence on the crystal growth, reaching the highest density of the films with pause/pulse-ratios between 0.25 and 1. Longer pauses cause an Ostwald-like ripening of the ZnO crystals and therewith a strong change in the crystal morphology from roundly shaped to hexagonal. Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of the pulsed electrochemical deposition of ZnO</title><author><name sortKey="Dunkel, Christian" uniqKey="Dunkel C">Christian Dunkel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover</s1><s2>30167 Hannover</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Hanovre</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Industrial Chemistry, Ruhr University Bochum</s1><s2>44801 Bochum</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>44801 Bochum</wicri:noRegion><wicri:noRegion>Ruhr University Bochum</wicri:noRegion><wicri:noRegion>44801 Bochum</wicri:noRegion></affiliation></author><author><name sortKey="L Ttich, Franziska" uniqKey="L Ttich F">Franziska L Ttich</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, Chemnitz University of Technology</s1><s2>09107 Chemnitz</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>09107 Chemnitz</wicri:noRegion><wicri:noRegion>Chemnitz University of Technology</wicri:noRegion><wicri:noRegion>09107 Chemnitz</wicri:noRegion></affiliation></author><author><name sortKey="Graaf, Harald" uniqKey="Graaf H">Harald Graaf</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, Chemnitz University of Technology</s1><s2>09107 Chemnitz</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>09107 Chemnitz</wicri:noRegion><wicri:noRegion>Chemnitz University of Technology</wicri:noRegion><wicri:noRegion>09107 Chemnitz</wicri:noRegion></affiliation></author><author><name sortKey="Oekermann, Torsten" uniqKey="Oekermann T">Torsten Oekermann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover</s1><s2>30167 Hannover</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Hanovre</settlement></placeName></affiliation></author><author><name sortKey="Wark, Michael" uniqKey="Wark M">Michael Wark</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Industrial Chemistry, Ruhr University Bochum</s1><s2>44801 Bochum</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>44801 Bochum</wicri:noRegion><wicri:noRegion>Ruhr University Bochum</wicri:noRegion><wicri:noRegion>44801 Bochum</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0033371</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0033371 INIST</idno><idno type="RBID">Pascal:13-0033371</idno><idno type="wicri:Area/Main/Corpus">001416</idno><idno type="wicri:Area/Main/Repository">001928</idno></publicationStmt><seriesStmt><idno type="ISSN">0013-4686</idno><title level="j" type="abbreviated">Electrochim. acta</title><title level="j" type="main">Electrochimica acta</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Electrochemical reaction</term><term>Electrodeposition</term><term>Indium tin oxide electrode</term><term>Morphology</term><term>Optically transparent electrode</term><term>Scanning electron microscopy</term><term>Surface structure</term><term>Transmission electron microscopy</term><term>Zinc Oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt électrolytique</term><term>Zinc Oxyde</term><term>Electrode ITO</term><term>Microscopie électronique balayage</term><term>Microscopie force atomique</term><term>Microscopie électronique transmission</term><term>Réaction électrochimique</term><term>Electrode optiquement transparente</term><term>Structure surface</term><term>Morphologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of pulse parameters on the morphology of ZnO prepared by pulsed cathodic electrodeposition from oxygen-saturated aqueous ZnCl<sub>2</sub> solution on ITO (indium tin oxide)/glass substrates was investigated. It was found that the ratio between the pulse and the pause duration has a crucial influence on the crystal growth, reaching the highest density of the films with pause/pulse-ratios between 0.25 and 1. Longer pauses cause an Ostwald-like ripening of the ZnO crystals and therewith a strong change in the crystal morphology from roundly shaped to hexagonal. Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-4686</s0></fA01><fA02 i1="01"><s0>ELCAAV</s0></fA02><fA03 i2="1"><s0>Electrochim. acta</s0></fA03><fA05><s2>80</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of the pulsed electrochemical deposition of ZnO</s1></fA08><fA11 i1="01" i2="1"><s1>DUNKEL (Christian)</s1></fA11><fA11 i1="02" i2="1"><s1>LÜTTICH (Franziska)</s1></fA11><fA11 i1="03" i2="1"><s1>GRAAF (Harald)</s1></fA11><fA11 i1="04" i2="1"><s1>OEKERMANN (Torsten)</s1></fA11><fA11 i1="05" i2="1"><s1>WARK (Michael)</s1></fA11><fA14 i1="01"><s1>Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover</s1><s2>30167 Hannover</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory of Industrial Chemistry, Ruhr University Bochum</s1><s2>44801 Bochum</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Physics, Chemnitz University of Technology</s1><s2>09107 Chemnitz</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>60-67</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1516</s2><s5>354000504094410100</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. 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Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.</s0></fC01><fC02 i1="01" i2="X"><s0>001C01H04A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dépôt électrolytique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrodeposition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Depósito electrolítico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Zinc Oxyde</s0><s2>NC</s2><s2>NA</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Zinc Oxides</s0><s2>NC</s2><s2>NA</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Zinc Óxido</s0><s2>NC</s2><s2>NA</s2><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Electrode ITO</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Indium tin oxide electrode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Electrodo ITO</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Scanning electron microscopy</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Microscopie force atomique</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Atomic force microscopy</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Microscopía fuerza atómica</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Microscopie électronique transmission</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Transmission electron microscopy</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Microscopía electrónica transmisión</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Réaction électrochimique</s0><s5>32</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Electrochemical reaction</s0><s5>32</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Reacción electroquímica</s0><s5>32</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Electrode optiquement transparente</s0><s5>33</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optically transparent electrode</s0><s5>33</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Electrodo ópticamente transparente</s0><s5>33</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Structure surface</s0><s5>34</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Surface structure</s0><s5>34</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estructura superficie</s0><s5>34</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Morphologie</s0><s5>35</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Morphology</s0><s5>35</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Morfología</s0><s5>35</s5></fC03><fN21><s1>021</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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